SEKI Technotron-ASTeX AX5200S-ECR

This MWPECVD reactor is equipped with a 3.0 kW microwave power generator that allow for high power density plasmas. In the same way, the reactor has an integrated ECR module to produce gentle plasmas.

Substrate temperature, chamber’s pressure and flows (up to 8 different gases) are automatically controlled.

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Capabilities:

• Deposition of doped and undoped polycrystalline diamond films.

• Hydrogen plasma: Reduction, etching and cleaning processes.

• Oxygen Plasmas: Reduction, etching and cleaning processes.

SEKI Technotron-ASTeX AX5010.

This MWPECVD reactor is equipped with a 1.5 kW microwave power generator.

Chamber’s pressure and gas flow (up to 4 different gases) are automatically controlled.

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Capabilities:

• Deposition of doped and undoped polycrystalline diamond films.

• Hydrogen plasma: Reduction, etching and cleaning processes.

• Oxygen Plasmas: Reduction, etching and cleaning processes.

RF-PECVD reactor (3ft x 22 mm ID quartz tube is fitted with a 1-zone tube furnace for external heating with automated temperature control up to 1100oC. Gas flow (up to 4 different gases) is also automatically controlled. Plasmas are produced by a RF generator (0-600W).

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Capabilities:

• Growth of silicon nanowires.

• Fundamental studies of plasma-catalysis.

• Hydrogen plasma: Reduction, etching and cleaning processes.

• Nitrogen plasma for nitridation of materials.

This reactor is equipped with an ECR plasma source (ASTeX ® Model AX4500), a 260W microwave power generator and a 25V/40A ECR power supply. The gas flow (up to 4 different gases) is automatically controlled.

Two different substrates stages can be used with this reactor. One is stationary with a Boroelectric™ heater which can heat the substrate up to 1100oC, the other is a rotating substrates stage with rotating speed up to 2000rpm and a radiative heating set-up.

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Capabilities:

• Growth of bulk gallium nitride

• Hydrogen plasma: Reduction, etching and cleaning processes.

• Nitrogen plasma for nitridation of materials.

Metalorganic Vapor Deposition system (8-in diameter chamber) equipped with a Bluewave Semiconductor ® substrate heater. Precursor distribution lines are fitted with bypass lines to alternate between run/vent modes during operation. Substrate distance to showerhead is adjustable.

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Capabilities:

• Deposition of epitaxial films of GaN, GaSb, InN, and ternary alloys thereof as well as p-type doping with Mg source.

• Heater assembly is adequate for reactive deposition, annealing, recrystallization, alloying, surface cleaning, adhesion improvement, and stress removal in thin films and coatings on 2-inch wafers in NH3, H2 and N2, up to 1000C at operating pressures between 2 mTorr – 760 Torr.

Hot filament CVD reactor (3ft x 40 mm ID quartz tube) equipped with resistively heated refractory metal sources (Mo, Nb, W, Ta). Reactor is fitted with a 1-zone tube furnace for external heating with automated temperature control up to 1400oC.

Furnace: Applied Test Systems Inc.

Capabilities:

• Deposition of thin films and nanostructured layers of refractory metals, refractory metal oxides and nitrides with filament operating temperatures up to 2500ºC, at pressures between 30 mTorr – 100 Torr, in H2, N2, O2 and/or Ar atmospheres.

• This equipment can be used for pyrolysis, annealing, oxidation, reduction, and nitridation of materials.